PART |
Description |
Maker |
KM641003A |
256K x 4 Bit(with OE)High-Speed CMOS Static RAM(256K x 4 OE)高速CMOS 静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
MB81C84A |
CMOS 256K-BIT HIGH-SPEED SRAM
|
Fujitsu Media Devices
|
LY6125616 LY6125616E LY6125616I LY6125616LL LY6125 |
5V 256K X 16 BIT HIGH SPEED CMOS SRAM
|
Lyontek Inc.
|
P4C1026-25J4C P4C1026-15CC P4C1026-15CI P4C1026-15 |
ULTRA HIGH SPEED 256K x 4 STATIC CMOS RAM 256K X 4 STANDARD SRAM, 20 ns, PQCC28 ULTRA HIGH SPEED 256K x 4 STATIC CMOS RAM 256K X 4 STANDARD SRAM, 35 ns, PQCC32 ULTRA HIGH SPEED 256K x 4 STATIC CMOS RAM 256K X 4 STANDARD SRAM, 35 ns, PQCC28 ULTRA HIGH SPEED 256K x 4 STATIC CMOS RAM 256K X 4 STANDARD SRAM, 20 ns, PDIP28 ULTRA HIGH SPEED 256K x 4 STATIC CMOS RAM 256K X 4 STANDARD SRAM, 35 ns, PDIP28 ULTRA HIGH SPEED 256K x 4 STATIC CMOS RAM 256K X 4 STANDARD SRAM, 35 ns, PDSO28 ULTRA HIGH SPEED 256K x 4 STATIC CMOS RAM 256K X 4 STANDARD SRAM, 20 ns, PDSO28
|
Pyramid Semiconductor, Corp. Pyramid Semiconductor Corporation Pyramid Semiconductor C...
|
KM641003CJ-10 |
256K x 4 Bit (with inverted OE) High-Speed CMOS Static RAM
|
Samsung Electronics
|
BH616UV4010 |
Ultra Low Power/High Speed CMOS SRAM 256K X 16 bit
|
Brilliance Semiconductor
|
BL-R313G BL-R513G BL-BX113G BL-BX113C BL-BX139 BL- |
BIGGER SIZE LED LAMPS (ROUND TYPES) 较大尺寸的LED节能灯(圆形类型 MBL /-5V/200MV RED 8-Bit Identity/Magnitude Comparators (P=Q) with Enable 20-SOIC -55 to 125 High Speed CMOS Logic Phase-Locked Loop with VCO and Lock Detector 16-PDIP -55 to 125 High Speed CMOS Logic 8-Bit Shift Register with Input Storage 16-SOIC -55 to 125 High Speed CMOS Logic 4-by-4 Register File 16-SOIC -55 to 125 High Speed CMOS Logic Octal Transparent Latches with 3-State Outputs 20-SOIC -55 to 125 High Speed CMOS Logic Dual Retriggerable Precision Monostable Multivibrators 16-PDIP -55 to 125
|
?╁??′唤?????? Yellow Stone, Corp. 早安股份有限公司
|
IS61LV2568L-10T-TR IS61LV2568L-8TL IS61LV2568L08 |
256K X 8 STANDARD SRAM, 8 ns, PDSO44 LEAD FREE, PLASTIC, TSOP2-44 256K x 8 HIGH-SPEED CMOS STATIC RAM
|
天津新技术产业园区管理委员会 Integrated Silicon Solution, Inc.
|
HY62LF16404D |
High speed, super low power and 4M bit full CMOS SRAM organized as 256K words by 16bits
|
HYNIX
|
K6R1008C1D-TC10 K6R1004V1D-KC08 K6R1016V1D-JC10 K6 |
256K X 4 STANDARD SRAM, 10 ns, PDSO32 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). 256Kx4位(与OE)的高速CMOS静态RAM.0V操作) 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). 256Kx4位(与OE)的高速CMOS静RAM.0V操作)
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
KM68257E KM68257E-10 KM68257E-12 KM68257E-15 KM682 |
32Kx8 bit high-speed CMOS static RAM (5V operating), 15ns 32Kx8 bit high-speed CMOS static RAM (5V operating), 10ns 32Kx8 Bit High-Speed CMOS Static RAM(5V Operating) Operated at Commercial and Industrial Temperature Ranges. 32Kx8位高速CMOS静态RAMV的工作),在商业和工业温度范围操作 32Kx8 bit high-speed CMOS static RAM (5V operating), 12ns
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|